Semiconductor device with cell region, method of generating layout diagram and system for same

ABSTRACT

A semiconductor device including: first, second and third active regions a first gate structure over the first active region and a first part of the second active region; a second gate structure over the third active region and a second part of the second active region; a first cell region including the first gate structure, the first active region and the first part of the second active region; a second cell region including the second gate structure, the third active region and the second part of the second active region; a first border region representing an overlap of the first and second cell regions which is substantially aligned with an approximate midline of the second active region; the second gate structure overlapping the first border region; and there being a first gap which is between the first gate structure and the first border region.

PRIORITY CLAIM

This application is a continuation of U.S. patent application Ser. No.16/579,775 filed Sep. 23, 2019, now U.S. Pat. No. 10,977,418 issued Apr.13, 2021, that claims priority to U.S. Provisional Patent ApplicationSer. No. 62/738,934 filed Sep. 28, 2018, which is incorporated herein byreference in its entirety.

BACKGROUND

An integrated circuit (“IC”) includes one or more semiconductor devices.One way in which to represent a semiconductor device is with a plan viewdiagram referred to as a layout diagram. Layout diagrams are generatedin a context of design rules. A set of design rules imposes constraintson the placement of corresponding patterns in a layout diagram, e.g.,geographic/spatial restrictions, connectivity restrictions, or the like.Often, a set of design rules includes a subset of design rulespertaining to the spacing and other interactions between patterns inadjacent or abutting cells where the patterns represent conductors in alayer of metallization.

Typically, a set of design rules is specific to a process technologynode by which will be fabricated a semiconductor device based on alayout diagram. The design rule set compensates for variability of thecorresponding process technology node. Such compensation increases thelikelihood that an actual semiconductor device resulting from a layoutdiagram will be an acceptable counterpart to the virtual device on whichthe layout diagram is based.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a block diagram, in accordance with some embodiments.

FIGS. 2A-2H are corresponding layout diagrams 200A-200H, in accordancewith some embodiments.

FIGS. 3A-3C are corresponding layout diagrams 300A-300C, in accordancewith some embodiments.

FIGS. 4A-4B are corresponding cross-sectional views 400A-400B, inaccordance with some embodiments.

FIG. 5 is a flowchart of a method, in accordance with some embodiments.

FIGS. 6A-6F are corresponding flowcharts of corresponding methods, inaccordance with some embodiments.

FIG. 7 is a block diagram of an electronic design automation (EDA)system, in accordance with some embodiments.

FIG. 8 is a block diagram of an integrated circuit (IC) manufacturingsystem, and an IC manufacturing flow associated therewith, in accordancewith some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components, values, operations, materials,arrangements, or the like, are described below to simplify the presentdisclosure. These are, of course, merely examples and are not intendedto be limiting. Other components, values, operations, materials,arrangements, or the like, are contemplated. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate relationshipsbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In some embodiments, a semiconductor device has a cell region whichincludes at least one border-encroaching active region. In someembodiments, there is provided a method and system for generating thesame. In some embodiments, such a method assumes that rows and finpatterns of a layout diagram extend substantially parallel to the X-axis(in the horizontal direction), and that gate patterns of the layoutdiagram extend substantially parallel to the Y-axis (in the verticaldirection). In some embodiments, such a method further assumes a libraryof standard cells which includes first and second single row-height(SRH) standard cells, the first SRH standard cell having one fin-pair(hereinafter, a ‘one-fin cell’), and the second SRH standard cell havingtwo pairs (hereinafter, a ‘two-fin cell’), where each fin-pair includesone fin pattern designated for PMOS configuration and one fin patterndesignated for NMOS configuration. In some embodiments, relative to thevertical direction, such a method further assumes that a first cell isabutted with (or stacked on) a second cell, and that that a first gatepattern of the first cell does not overlap a second gate pattern of thesecond cell so that corresponding first and second gate electrodes (ofcorresponding first and second cell regions in a semiconductor devicebased on the layout diagram) are not electrically coupled.

According to another approach, relative to the vertical direction, inorder to enhance electrical isolation, neither of the first gate patternnor the second gate pattern is permitted to overlap a fin pattern whichstraddles the border of the first and second cells, resulting in each ofthe one-fin and two-fin cells has a height equal to 5 TP, where TPrepresents a track pitch. As a result of the design rule according tothe other approach, a cut pattern is generated over the straddling finpattern (to indicate subsequent removal of the straddling fin pattern)or the straddling fin pattern is designated for configuration as a dummyfin, which wastes the space occupied by the straddling fin at the topand bottom of each of the one-fin and two-fin cells, and further wastesthe space in the one-fin cell that otherwise would have been occupied bythe second fin-pair. By contrast, according to at least someembodiments, one of the first and second gate patterns is permitted tooverlap (or encroach upon), and electrically couple with, the straddlingfin pattern so that a corresponding one of corresponding first andsecond gate electrodes (of corresponding first and second cell regionsin a semiconductor device based on the layout diagram) is electricallycoupled to the corresponding straddling fin which results in an improvedcell density, and corresponding layout diagram density, as compared tothe other approach. According to at least some embodiments, each of theone-fin and two-fin cells has a height of 3 TP, which represents a ⅖reduction in height as compared to the other approach.

FIG. 1 is a block diagram of a semiconductor device 100 in accordancewith some embodiments.

In FIG. 1 , semiconductor device 100 includes, among other things, acircuit macro (hereinafter, macro) 101. In some embodiments, macro 101is a logic macro. In some embodiments, macro 101 is an SRAM macro. Insome embodiments, macro 101 is a macro other than a logic macro or anSRAM macro. Macro 101 includes, among other things, one or more cellregions 102 arranged in corresponding rows 104(1)-104(2). In someembodiments, each cell region 102 is implemented based on a layoutdiagram resulting from one or more of the methods disclosed herein andso has an improved cell-region density.

FIGS. 2A-2B are corresponding layout diagrams 200A-200B, in accordancewith some embodiments.

FIGS. 2A-2B assume an orthogonal XYZ coordinate system in which theX-axis, Y-axis and Z-axis represent corresponding first, second andthird directions. In some embodiments, where a page of print mediumrepresents a plane, e.g., a piece of paper, FIGS. 2A-2B assume that theX-axis and Y-axis are coplanar with a page, and the Z-axis is orthogonalto the plane of the page. In some embodiments, the first, second andthird directions correspond to a different orthogonal coordinate systemthan the XYZ coordinate system.

Layout diagrams 200A-200B are arranged with respect to track lines,including track lines 205(1), 205(2), 205(3), . . . , 205(10), 205(11)and 205(12), which are oriented substantially parallel to the X-axis.Tracks 205(1)-205(12) have a pitch, TP, determined by the design rulesand scale of the corresponding semiconductor process technology node.Layout diagrams 200A-200B also are arranged with respect to rows,including rows 204(1), 204(2) and 204(3), which are orientedsubstantially parallel to the X-axis. Relative to the Y-axis, each rowhas a height of 3 TP. In some embodiments, the rows have a heightdifferent than 3 TP. Accordingly, for a library of standard cellsassociated with the corresponding semiconductor process technology node,a single row-height (SRH) standard cell has a height of 3 TP, whichrepresents a ⅖ reduction in height as compared to the other approach.

In FIG. 2A, layout diagram 200A includes a substrate pattern 206(1), andcells 210(1) and 211(1) correspondingly on substrate pattern 206(1).Each of 210(1) and 211(1) is a SRH standard cell. Each of cells 210(1)and 211(1) is in row 204(2). Layout diagram 200A further includes cells212(1) and 212(2), each of which is partially shown for simplicity ofillustration. Relative to the Y-axis: cell 212(1) is in row 204(1) sothat the bottom side thereof abuts (or is stacked on) the top side ofcell 211(1); and cell 212(2) is in row 204(3) so that the top sidethereof abuts (or is stacked underneath) the bottom side of cell 211(1).

In some embodiments cell 210(1) represents a first subset of one or moreof cell regions 102 in semiconductor device 100 of FIG. 1 , and cell211(1) represents a second subset of one or more cell regions 102 insemiconductor device 100 of FIG. 1 . Though not shown for simplicity ofillustration, in some embodiments, layout diagram 200A includesadditional instances of cell 210(1), and/or additional instances of cell211(1), and/or additional instances of cells 212(1) and/or 212(2).

Layout diagram 200A further includes active area patterns havingcorresponding long axes which extend substantially parallel to theX-axis. For example, cell 210(1) includes active area patterns 207N(1)and 207P(1) which are substantially aligned with corresponding tracks205(6) and 205(7).

Active area patterns 207N(1) and 207P(1) represent corresponding NMOSand PMOS planar active regions in a semiconductor device based on layoutdiagram 200A. Accordingly, active area patterns 207N(1) and 207P(1) aredesignated for corresponding NMOS and PMOS planar transistorconfigurations. In some embodiments, active area patterns 207N(1) and207P(1) are designated for corresponding planar transistorconfigurations other than corresponding NMOS and PMOS planar transistorconfigurations. In some embodiments, each of active area patterns207N(1) and 207P(1) is represented correspondingly by one or more finpatterns (see FIG. 2B). In some embodiments, active area patterns207N(1) and 207P(1) are designated for nano-wire configuration. In someembodiments, active area patterns 207N(1) and 207P(1) are designated fornano-sheet configuration. In some embodiments, active area patterns207N(1) and 207P(1) are designated for Gate-All-Around (GAA)configuration. In some embodiments in which an active region is referredto as an oxide-dimensioned (OD) region, active area patterns 207N(1) and207P(1) are referred to as corresponding OD patterns 207N(1) and207P(1). Cell 211(1) includes active area patterns 207N(2) and 207P(2).

Cell 212(1) includes active area pattern 207N(3). Relative to thevertical direction, active area pattern 207N(3) is abutted with activearea pattern 207N(2) such that active area patterns 207N(2) and 207N(3)represent corresponding first and second parts of a larger active areapattern which is shared correspondingly by cell 211(1) and cell 212(1).Where active area patterns 207N(2) and 207N(3) abut, a border region227(1) is formed, a long axis of which is substantially aligned with thetop border of cell 211(1) and the bottom border of cell 212(1). Borderregion 227(1) straddles a top area of cell 211(1) and a bottom area ofcell 212(1). As a practical matter, the long axis of border region227(1) also is substantially aligned with an approximate midline of thelarger active area pattern which includes active area patterns 207N(2)and 207N(3).

Cell 212(2) includes active area pattern 207P(2). Relative to thevertical direction, active area pattern 207P(3) is abutted with activearea pattern 207P(2) such that active area patterns 207P(2) and 207P(3)represent corresponding first and second parts of a larger active areapattern which is shared correspondingly by cell 211(1) and cell 212(2).Where active area patterns 207P(2) and 207P(3) abut, a border region227(2) is formed, a long axis of which is substantially aligned with thebottom border of cell 211(1) and the top border of cell 212(2). Borderregion 227(2) straddles a bottom area of cell 211(1) and a top area ofcell 212(2). As a practical matter, the long axis of border region227(2) also is substantially aligned with an approximate midline of thelarger active area pattern which includes active area patterns 207P(2)and 207P(3).

In FIG. 2A, cell 210(1) includes a gate pattern 214(1) and cell 211(1)includes a gate pattern 215(1). Long axes of corresponding gate patterns214(1) and 215(1) extend substantially parallel to the Y-axis. Relativeto the Y-axis, gate pattern 214(1) overlaps active area patterns 207N(1)and 207P(1). Relative to the Y-axis, there is: a gap 222(1) between atop end of gate pattern 214(1) and the top border of cell 210(1); and agap 222(2) between a bottom end of gate pattern 214(1) and the bottomborder of cell 210(1). Relative to the Y-axis, gate pattern 215(1)overlaps active area patterns 207N(2) and 207P(2), and further extendsso as to overlap border regions 227(1) and 227(2). As such, gate pattern215(1) encroaches upon (or into) active area pattern 207N(3) of cell212(1). For simplicity of illustration, each of cells 210(1) and 211(1)is shown as including one gate pattern. In some embodiments, cell 210(1)and/or 211(1) includes multiple gate patterns separated from each otheralong the X-axis. Relative to the X-axis gate patterns are separated bya distance a uniform distance. In some embodiments, the uniform distancerepresents one contacted poly pitch (CPP) for the correspondingsemiconductor process technology node.

Cells 210(1) and 211(1) represent corresponding circuits. In someembodiments, cells 210(1) and 211(1) represent corresponding circuitswhich provide corresponding functions. In some embodiments, cells 210(1)and 211(1) represent corresponding circuits which provide correspondinglogical functions, and are referred to accordingly as logic cells. Insome embodiments, at least one of cells 210(1) and 211(1) representcorresponding circuits which provide corresponding functions other thana logical function.

Turning to FIG. 2B, layout diagram 200B is similar to layout diagram200A. FIG. 2B follows a similar numbering convention to that of FIG. 2A.Though corresponding, some components also differ. To help identifycomponents which correspond but nevertheless have differences, thenumbering convention uses parenthetical numbers. For example, pattern206(2) in FIG. 2B and pattern 206(1) in FIG. 2A are both substratepatterns, with similarities being reflected in the common root 206(_),and with the differences being reflected in the parentheticals _(1) and_(2). For brevity, the discussion will focus more on differences betweenFIG. 2B and FIG. 2A than on similarities.

In FIG. 2B, fin patterns have been used to represent correspondingactive area patterns of FIG. 2A. More particularly, fin patterns 208N(1)and 208P(1) in cell 210(2) of FIG. 2B have been used to representcorresponding active area patterns 207N(1) and 207P(1) in correspondingcell 210(1) of FIG. 2A. Fin patterns 208N(4) and 208N(3) in cell 211(2)of FIG. 2B have been used to represent active area pattern 207N(2) incorresponding cell 211(1) of FIG. 2A. Fin patterns 208P(2) and 208P(3)in cell 211(2) of FIG. 2B have been used to represent active areapattern 207P(2) in corresponding cell 211(1) of FIG. 2A. Fin patterns208N(2) and 208N(3) in cell 212(3) of FIG. 2B have been used torepresent active area pattern 207N(3) in corresponding cell 212(1) ofFIG. 2A. Fin patterns 208P(3) and 208P(4) in cell 212(4) of FIG. 2B havebeen used to represent active area pattern 207P(3) in corresponding cell212(2) of FIG. 2A.

Cell 210(2) is SRH standard cell and also is described as one-fin cellwhich has one fin-pair. Cell 211(2) is SRH standard cell and also isdescribed as two-fin cell which has two fin-pairs. In some embodiments,each fin-pair includes one fin pattern designated for NMOS configurationand one fin pattern designated for PMOS configuration.

In FIG. 2B, fin patterns 208N(1)-208N(4) and 208P(1)-208P(4) representcorresponding NMOS and NMOS fins in a semiconductor device based onlayout diagram 200B. Accordingly, active area patterns fin patterns208N(1)-208N(4) and 208P(1)-208P(4) are designated for correspondingNMOS finFET and PMOS finFET configuration. In some embodiments, activearea patterns fin patterns 208N(1)-208N(4) and 208P(1)-208P(4) aredesignated for corresponding PMOS finFET and NMOS finFET configuration.In some embodiments, fin patterns 208N(1)-208N(4) and 208P(1)-208P(4)are designated for nano-wire configuration. In some embodiments, a finpatterns 208N(1)-208N(4) and 208P(1)-208P(4) are designated fornano-sheet configuration. In some embodiments, fin patterns208N(1)-208N(4) and 208P(1)-208P(4) are designated for Gate-All-Around(GAA) configuration. In some embodiments, quantities of fin patternsother than the quantities shown in FIG. 2B are included in correspondingcells 210(2), 211(2), 212(3) and 212(4).

In layout diagram 200B, cell 212(3) further includes a gate pattern217(1) which extends toward a bottom border of cell 212(3) sufficientlyfar to overlap fin pattern 208N(2). Cell 212(4) further includes a gatepattern 217(2) which extends toward a top border of cell 212(4)sufficiently far to overlap fin pattern 208P(4). Relative to the Y-axis,there is: a gap 226(1) between a top end of gate pattern 215(2) and abottom end of gate pattern 217(1); and a gap 226(2) between a bottom endof gate pattern 215(2) and a top end of gate pattern 217(2).

Border region 227(3), which straddles a top area of cell 211(2) and abottom area of cell 212(3), also straddles fin pattern 208N(3). Borderregion 227(4), which straddles a bottom area of cell 211(2) and a toparea of cell 212(4), also straddles fin pattern 208P(3). By contrast,according to the other approach, no gate pattern would be permitted tooverlap fin pattern 208N(3) which straddles the top area of cell 211(2)and the bottom area of cell 212(3), and no gate pattern would bepermitted to overlap fin pattern 208P(3) which straddles the bottom areaof cell 211(2) and the top area of cell 212(4). In effect, fin pattern208N(3) is shared by cells 211(2) and 212(3), and fin pattern 208P(3) isshared by cells 211(2) and 212(4). By overlapping fin pattern 208N(3),gate pattern 215(2) of cell 211(2) encroaches upon cell 212(3). Byoverlapping fin pattern 208P(3), gate pattern 215(2) of cell 211(2)encroaches upon cell 212(4). By encroaching upon each of cells 212(3)and 212(4), cell 211(2) provides a two-fin cell having a singlerow-height (SRH), which avoids wasted space otherwise incurred accordingto the other approach. Each of cells 210(2) and 211(2) has a height of 3TP, which represents a ⅖ reduction in height as compared to the otherapproach.

FIGS. 2C-2H are corresponding layout diagrams 200C-200H, in accordancewith some embodiments.

Layout diagrams 200C-200H are similar to layout diagram 200B of FIG. 2B.FIGS. 2C-2H follows a similar numbering convention to that of FIG. 2B.Though corresponding, some components also differ. To help identifycomponents which correspond but nevertheless have differences, thenumbering convention uses parenthetical numbers. For example, cell211(3) in FIG. 2C and cell 211(2) in FIG. 2B are both two-fin cells,with similarities being reflected in the common root 211(_), and withthe differences being reflected in the parentheticals _(3) and _(2). Forbrevity, the discussion will focus more on differences between FIGS.2C-2H and FIG. 2B than on similarities, and differences amongst FIGS.2C-2H than on similarities. Some similar elements in FIGS. 2C-2H havebeen eliminated for simplicity of illustration, e.g., counterparts ofsubstrate pattern 206(2) and track lines 205(1)-205(12) have not beenshown in FIGS. 2C-2H.

In FIG. 2C, layout diagram 200C includes fin patterns 208P(5)-208P(10)and 208N(5)-208N(7), and gate patterns 218(1), 214(3), 215(3) and 219(1)in corresponding cells 212(5), 210(3), 211(3) and 212(6). Partial cell212(5), one-fin cell 210(3), two-fin cell 211(3) and partial cell 212(6)are in corresponding rows 204(4), 204(1), 204(2) and 204(3). Relative tothe Y-axis, cell 212(5) is located so that the bottom side thereof abuts(or is stacked on) the top side of cell 210(3) at a border region228(1); cell 210(3) is located so that the bottom side thereof abuts thetop side of cell 211(3) at a border region 228(2); and cell 211(3) islocated so that the bottom side thereof abuts the top side of cell212(6) at a border region 228(3).

Relative to the Y-axis, there is: a gap 226(3) between a bottom end ofgate pattern 218(1) and a top end of gate pattern 214(3); a gap 226(4)between a bottom end of gate pattern 214(3) and a top end of gatepattern 215(3); and a gap 226(5) between a bottom end of gate pattern214(3) and a top end of gate pattern 219(1).

The bottom end of gate pattern 217(3) extends toward the bottom borderof cell 212(5) sufficiently far to overlap fin pattern 208P(6). The topend of gate pattern 215(3) extends toward the top border of cell 211(3)sufficiently far to overlap fin pattern 208N(6). The bottom end of gatepattern 215(3) extends toward the bottom border of cell 211(3)sufficiently far to overlap fin pattern 208P(9).

Border region 228(1) straddles fin pattern 208P(6). Border region 228(2)straddles fin pattern 208N(6). Border region 228(3) straddles finpattern 208P(9). By contrast, according to the other approach, no gatepattern would be permitted to overlap fin pattern 208P(6), nor finpattern 208N(6), nor fin pattern 208P(9). By encroaching upon each ofcells 210(3) and 212(6), cell 211(3) provides a two-fin cell having asingle row-height (SRH), which avoids wasted space otherwise incurredaccording to the other approach. Each of cells 210(3) and 211(3) has aheight of 3 TP, which represents a ⅖ reduction in height as compared tothe other approach. Similarly, by encroaching upon cell 210(3), cell212(5) avoids wasted space otherwise incurred according to the otherapproach.

In some embodiments, fin pattern 208P(6) is not included such that finpattern 208P(6) is optional as indicated by the dashed outline of finpattern 208P(6). In some embodiments, where fin pattern 208P(6) is notincluded, portion 218(1) of gate pattern 217(3) correspondingly is notincluded such that portion 218(1) is optional as indicated by the dashedoutline of portion 218(1).

Turning to FIG. 2D, layout diagram 200D includes fin patterns208P(11)-208P(16) and 208N(8)-208N(10), and gate patterns 219(2),216(1), 215(4) and 219(3) in corresponding cells 212(7), 213(1), 211(4)and 212(8). Partial cell 212(7), cell 213(1), two-fin cell 211(4) andpartial cell 212(8) are in corresponding rows 204(4), 204(1), 204(2) and204(3). Relative to the Y-axis, cell 212(7) is located so that thebottom side thereof abuts (or is stacked on) the top side of cell 213(1)at a border region 228(4); cell 213(1) is located so that the bottomside thereof abuts the top side of cell 211(4) at a border region228(5); and cell 211(4) is located so that the bottom side thereof abutsthe top side of cell 212(8) at a border region 228(6).

In FIG. 2D, cell 213(1) is SRH standard cell and also is described as1.5-fin cell, and as such has 1.5 fin-pairs. Cell 213(1) includes a fullfin-pair and a half fin-pair. The full pair corresponds to fin patterns208P(13) and 208N(8). The half fin-pair corresponds to fin pattern208P(12).

Relative to the Y-axis, there is: a gap 226(6) between a bottom end ofgate pattern 219(2) and a top end of gate pattern 216(1); a gap 226(7)between a bottom end of gate pattern 216(1) and a top end of gatepattern 215(4); and a gap 226(8) between a bottom end of gate pattern215(4) and a top end of gate pattern 219(3).

The top end of gate pattern 216(1) extends toward the top border of cell213(1) sufficiently far to overlap fin pattern 208P(12). The top end ofgate pattern 215(4) extends toward the top border of cell 211(4)sufficiently far to overlap fin pattern 208N(9). The bottom end of gatepattern 215(4) extends toward the bottom border of cell 211(4)sufficiently far to overlap fin pattern 208P(15).

Border region 228(4) straddles fin pattern 208P(12). Border region228(5) straddles fin pattern 208N(9). Border region 228(6) straddles finpattern 208P(15). By contrast, according to the other approach, no gatepattern would be permitted to overlap fin pattern 208P(12), nor finpattern 208N(9), nor fin pattern 208P(15). By encroaching upon cell212(7), cell 213(1) provides a 1.5-fin cell having a single row-height(SRH), which avoids wasted space otherwise incurred according to theother approach. By encroaching upon each of cells 213(1) and 212(8),cell 211(4) provides a two-fin cell having a single row-height (SRH),which avoids wasted space otherwise incurred according to the otherapproach. Each of cells 213(1) and 211(3) has a height of 3 TP, whichrepresents a ⅖ reduction in height as compared to the other approach.

Turning to FIG. 2E, layout diagram 200E includes fin patterns208P(17)-208P(22) and 208N(11)-208N(13), and gate patterns 217(4),216(2), 216(3) and 219(4) in corresponding cells 212(11), 213(2), 213(3)and 212(10). Partial cell 212(10), 1.5-fin cell 213(2), 1.5-fin cell213(3) and partial cell 212(10) are in corresponding rows 204(4),204(1), 204(2) and 204(3). Relative to the Y-axis, cell 212(11) islocated so that the bottom side thereof abuts (or is stacked on) the topside of cell 213(2) at a border region 228(7); cell 213(2) is located sothat the bottom side thereof abuts the top side of cell 213(3) at aborder region 228(8); and cell 213(3) is located so that the bottom sidethereof abuts the top side of cell 212(10) at a border region 228(9).

Relative to the Y-axis, there is: a gap 226(9) between a bottom end ofgate pattern 217(4) and a top end of gate pattern 216(2); a gap 226(10)between a bottom end of gate pattern 216(2) and a top end of gatepattern 216(3); and a gap 226(11) between a bottom end of gate pattern216(3) and a top end of gate pattern 219(4).

The bottom end of gate pattern 217(4) extends toward the bottom borderof cell 212(11) sufficiently far to overlap fin pattern 208P(18). Thebottom end of gate pattern 216(2) extends toward the bottom border ofcell 213(2) sufficiently far to overlap fin pattern 208N(12). The bottomend of gate pattern 216(3) extends toward the bottom border of cell213(3) sufficiently far to overlap fin pattern 208P(21).

Border region 228(7) straddles fin pattern 208P(18). Border region228(8) straddles fin pattern 208N(12). Border region 228(9) straddlesfin pattern 208P(21). By contrast, according to the other approach, nogate pattern would be permitted to overlap fin pattern 208P(18), nor finpattern 208N(12), nor fin pattern 208P(21). By encroaching upon cell213(3), cell 213(2) provides a 1.5-fin cell having a single row-height(SRH), which avoids wasted space otherwise incurred according to theother approach. By encroaching upon cell 212(10), cell 213(3) provides a1.5-fin cell having a single row-height (SRH), which avoids wasted spaceotherwise incurred according to the other approach. Similarly, byencroaching upon cell 213(2), cell 212(11) avoids wasted space otherwiseincurred according to the other approach. Each of cells 213(2) and213(3) has a height of 3 TP, which represents a ⅖ reduction in height ascompared to the other approach.

In some embodiments, fin pattern 208P(18) is optional as indicated bythe dashed outline of fin pattern 208P(18). In some embodiments, wherefin pattern 208P(18) is not included, portion 218(2) of gate pattern217(4) correspondingly is not included such that portion 218(2) isoptional as indicated by the dashed outline of portion 218(2).

Turning to FIG. 2F, layout diagram 200F includes fin patterns208P(23)-208P(28) and 208N(14)-208N(16), and gate patterns 217(5),214(4), 216(4) and 217(6) in corresponding cells 212(11), 210(4), 213(4)and 212(12). Partial cell 212(11), one-fin cell 210(4), 1.5-fin cell213(4) and partial cell 212(12) are in corresponding rows 204(4),204(1), 204(2) and 204(3). Relative to the Y-axis, cell 212(11) islocated so that the bottom side thereof abuts (or is stacked on) the topside of 210(4) at a border region 228(10); cell 210(4) is located sothat the bottom side thereof abuts the top side of cell 213(4) at aborder region 228(11); and cell 213(4) is located so that the bottomside thereof abuts the top side of cell 212(12) at a border region228(12).

Relative to the Y-axis, there is: a gap 226(12) between a bottom end ofgate pattern 217(5) and a top end of gate pattern 214(4); a gap 226(13)between a bottom end of gate pattern 214(4) and a top end of gatepattern 216(4); and a gap 226(14) between a bottom end of gate pattern216(4) and a top end of gate pattern 217(6).

The bottom end of gate pattern 217(5) extends toward the bottom borderof cell 212(11) sufficiently far to overlap fin pattern 208P(24). Thetop end of gate pattern 216(4) extends toward the top border of cell213(4) sufficiently far to overlap fin pattern 208N(15). The top end ofgate pattern 217(6) extends toward the top border of cell 212(12)sufficiently far to overlap fin pattern 208P(27).

Border region 228(10) straddles fin pattern 208P(24). Border region228(11) straddles fin pattern 208N(15). Border region 228(12) straddlesfin pattern 208P(27). By contrast, according to the other approach, nogate pattern would be permitted to overlap fin pattern 208P(24), nor finpattern 208N(15), nor fin pattern 208P(27). By encroaching upon cell210(4), cell 213(4) provides a 1.5-fin cell having a single row-height(SRH), which avoids wasted space otherwise incurred according to theother approach. Similarly, by encroaching upon cell 210(4), cell 212(11)avoids wasted space otherwise incurred according to the other approach.By encroaching upon cell 213(4), 210(12) avoids wasted space otherwiseincurred according to the other approach. Cell 213(4) has a height of 3TP, which represents a ⅖ reduction in height as compared to the otherapproach.

In some embodiments, fin pattern 208P(24) is optional as indicated bythe dashed outline of fin pattern 208P(24). In some embodiments, wherefin pattern 208P(24) is not included, portion 218(3) of gate pattern217(5) correspondingly is not included such that portion 218(3) isoptional as indicated by the dashed outline of portion 218(3). In someembodiments, fin pattern 208P(27) is optional as indicated by the dashedoutline of fin pattern 208P(27). In some embodiments, where fin pattern208P(27) is not included, portion 218(4) of gate pattern 217(6)correspondingly is not included such that portion 218(4) is optional asindicated by the dashed outline of portion 218(3).

Turning to FIG. 2G, layout diagram 200G includes fin patterns208P(29)-208P(37) and 208N(17)-208N(22), and gate patterns 217(7),216(5), 216(6) and 219(5) in corresponding cells 212(13), 230(1), 230(2)and 212(14). Partial cell 212(13) and partial cell 212(14) are incorresponding rows 204(4) and 204(6). Cell 230(1) is a double row-height(DRH) cell and is located across rows 204(1) and 204(2). Cell 230(2) isa DRH cell and is located across rows 204(3) and 204(5).

In FIG. 2G, cell 230(1) is DRH standard cell and also is described asthree-fin cell, and as such has three fin-pairs, corresponding to finpatterns 208P(31)-208P(33) and 208N(17)-208N(19). Cell 230(2) is DRHstandard cell and also is described as three-fin cell, where the threefull pairs correspond to fin patterns 208P(34)-208P(36) and208N(20)-208N(22).

Relative to the Y-axis, cell 212(13) is located so that the bottom sidethereof abuts (or is stacked on) the top side of cell 230(1) at a borderregion 228(13); cell 230(1) is located so that the bottom side thereofabuts the top side of cell 230(2) at a border region 228(15); and cell230(2) is located so that the bottom side thereof abuts the top side ofcell 212(14) at a border region 228(17).

Cell 230(1) is a combination of what otherwise would be a cell 213(5)and a separate cell 211(5) that otherwise would have a border region228(14) which straddles fin pattern 208N(18). Cell 230(2) is acombination of what otherwise would be a cell 213(6) and a separate cell211(6) that otherwise would have a border region 228(16) which straddlesfin pattern 208N(21).

Relative to the Y-axis, there is: a gap 226(15) between a bottom end ofgate pattern 217(7) and a top end of gate pattern 216(5); a gap 226(16)between a bottom end of gate pattern 216(5) and a top end of gatepattern 216(6); and a gap 226(17) between a bottom end of gate pattern216(6) and a top end of gate pattern 219(5).

The bottom end of gate pattern 217(7) extends toward the bottom borderof cell 212(13) sufficiently far to overlap fin pattern 208P(30). Thebottom end of gate pattern 216(5) extends toward the bottom border ofcell 230(1) sufficiently far to overlap fin pattern 208P(33). The bottomend of gate pattern 216(6) extends toward the bottom border of cell230(2) sufficiently far to overlap fin pattern 208P(36).

Border region 228(13) straddles fin pattern 208P(30). Border region228(15) straddles fin pattern 208P(33). Border region 228(17) straddlesfin pattern 208P(36). By contrast, according to the other approach, nogate pattern would be permitted to overlap fin pattern 208P(30), nor finpattern 208P(33), nor fin pattern 208P(36). By encroaching upon cell230(1), cell 230 provides a three-fin cell having a double row-height(DRH), which avoids wasted space otherwise incurred according to theother approach. By encroaching upon cell 230(1), cell 230(2) provides athree-fin cell having a double row-height (DRH), which avoids wastedspace otherwise incurred according to the other approach. Similarly, byencroaching upon cell 230(1), cell 212(13) avoids wasted space otherwiseincurred according to the other approach.

In some embodiments, fin pattern 208P(30) is optional as indicated bythe dashed outline of fin pattern 208P(30). In some embodiments, wherefin pattern 208P(30) is not included, portion 218(5) of gate pattern217(7) correspondingly is not included such that portion 218(5) isoptional as indicated by the dashed outline of portion 218(5).

Turning to FIG. 2H, layout diagram 200H includes cells 232(1), 234(1),234(2), 236(1) and 236(2). In addition to rows 204(9), 204(10) and204(11), layout diagram is organized according to half-rows231(1)-231(5). Row 204(9) includes half-rows 231(1) and 231(2). Row204(10) includes half-rows 231(3) and 231(4). Row 204(11) includeshalf-rows 231(4) and 231(5). As part of a repeating sequence, half-rows231(1) and 231(2) have fin patterns for NMOS configuration (N-finpatterns), and half-rows 231(3) and 231(4) have fin patterns for PMOSconfiguration (P-fin patterns). In some embodiments, the repeatingsequence is the opposite, with half-rows 231(3) and 231(4) having P-finpatterns and half-rows 231(2) and 231(3) having N-fin patterns. In someembodiments, a yet different sequence of N-fin patterns and P-finpatterns.

In FIG. 2H, relative to the Y-axis, each of cells 232(1), 234(1),234(2), 236(1) and 236(2) is offset by a half-row relative to a fullrow. Cell 232(1) is a double row-height (DRH) cell and is located acrosshalf-rows 231(1)-231(4). Each of cells 234(1) and 236(1) is a 1.5row-height (or three-halves row-height (THRH)) cell and is locatedacross half-rows 231(1)-231(3). Each of cells 234(2) and 236(2) is aTHRH cell and is located across half-rows 231(3)-231(5).

Cell 232(1) is a three-fin cell and includes three N-fins and threeP-fins. Cell 234(1) is a variation of a two-fin cell and includes threeN-fins and one P-fin. Cell 234(2) also is a variation of a two-fin celland includes one N-fin and three P-fins. Cell 236(1) is a variation of a2.5-fin cell and includes three N-fins and two P-fins. Cell 236(2) alsois a variation of a 2.5-fin cell and includes two N-fins and threeP-fins.

FIGS. 3A-3C are corresponding layout diagrams 300A-300C, in accordancewith some embodiments.

Layout diagrams 300A-300C are similar to layout diagrams 200B-200G ofcorresponding FIGS. 2A-2G. FIGS. 3A-3C follow a similar numberingconvention to that of FIGS. 2A-2H. Though corresponding, some componentsalso differ. Whereas FIGS. 2A-2H use 2-series numbers, FIGS. 3A-3C use3-series numbers. To help identify components which correspond butnevertheless have differences, the numbering convention usesparenthetical numbers. For example, cell 310(5) of FIG. 3A and cell210(4) of FIG. 2F are both one-fin cells, with similarities beingreflected in the common root _10(_), and with the differences beingreflected in the series number 3_(_) and 2_(_) and in the parentheticals_(5) and _(4). For brevity, the discussion will focus more ondifferences between FIGS. 3A-3H and FIGS. 2A-2F than on similarities.

Cell 310(5) further includes an MD pattern 340(1), a VD pattern 342(1)and a M0 pattern 344(1), as compared to cell 210(4) of FIG. 2F. Cell311(5) further includes an MD pattern 340(2), a VD pattern 342(2) and aM0 pattern 344(2), as compared to cell 211(4) of FIG. 2D. M0 patterns344(1)-34(2) have corresponding long axes extending substantiallyparallel to the X-axis. MD patterns 340(1)-340(2) have correspondinglong axes extending substantially parallel to the Y-axis.

The fin patterns (not numbered in FIG. 3A), MD patterns 340(1)-340(2),the gate patterns (not numbered in FIG. 3A), and VD patterns342(1)-342(2) are included in a transistor level of layout diagram 300A,which corresponds to a transistor layer of a semiconductor device basedon layout diagram 300A. M0 patterns 344(1)-344(2) are included in alevel M0 of metallization in layout diagram 300A, which corresponds to alayer M0 of metallization of a semiconductor device based on layoutdiagram 300A.

In layout diagram 300A, MD patterns 340(1)-340(2) representcorresponding MD conductive structures in a transistor layer of asemiconductor device based on layout diagram 200A. The gate patterns(not numbered in FIG. 3A) represent corresponding gate structures in atransistor layer of a semiconductor device based on layout diagram 300A.VD patterns 342(1)-342(2) represent corresponding VD structures in atransistor layer of a semiconductor device based on layout diagram 200A.A VD structure (see FIG. 4B) electrically couples a drain/sourcestructure to a corresponding M0 conductive segment. M0 patterns344(1)-344(2) represent corresponding conductive segments in layer M0 ofmetallization of a semiconductor device based on layout diagram 200A.

Layout diagram 300A assumes a corresponding semiconductor processtechnology node which includes various design rules for generating alayout diagram. Layout diagram 300A further assumes that the designrules follow a numbering convention in which a first level ofmetallization (M_1st) and a corresponding first level of interconnectstructures (V_1st) are referred to correspondingly as M0 and V0. LevelM0 of layout diagram 300A correspondingly represents layer M0 ofmetallization in a semiconductor device based on layout diagram 300A. Insome embodiments, the numbering convention assumes that the M_1st leveland the V_1st level are referred to correspondingly as M1 and V1.

In the example of FIG. 3A, it is assumed that: M0 patterns 344(1)-344(2)are power grid (PG) patterns that represent corresponding conductors ina power grid of a semiconductor device which is fabricated based onlayout diagram 300A. In some embodiments, PG patterns 244(1)-344(2)designated for providing a system reference voltage. In FIG. 3A, PGpatterns 344(1)-344(2) are designated for providing VDD. In someembodiments, PG patterns 344(1)-344(2) are designated for providingcorresponding voltages other than VDD.

In layout diagram 300A, relative to the Y-axis, it is contemplated thatcell 310(5) is to be located so that the bottom side thereof abuts (oris stacked on) the top side of cell 311(5), as indicated by phantomround-cornered rectangle 346(1). However, in such an abuttedarrangement, M0 patterns 344(1) and 344(2) would be merged with a resultthat VD pattern 342(1) would represent a shorted electrical coupling(short circuit) across the fin pattern which straddles the top border ofcell 311(5). To avoid the short-circuit, an alternate arrangement ofcell 310(5) is provided in layout diagram 300B of FIG. 3B as cell310(6).

Turning to FIG. 3B, MD pattern 340(3) and VD pattern 342(3) of cell310(6) have replaced correspondingly MD pattern 340(1) and VD pattern342(1) of cell 310(5) of FIG. 3A. MD pattern 340(3) and VD pattern342(3) are located to the left side of the gate pattern in cell 310(6),whereas MD pattern 340(1) and VD pattern 342(1) are located to the rightof the gate pattern in cell 310(5). In layout diagram 300B, relative tothe Y-axis, it is contemplated that cell 310(6) is to be located so thatthe bottom side thereof abuts (or is stacked on) the top side of cell311(5), as indicated by phantom round-cornered rectangle 346(2). In suchan abutted arrangement, the short circuit is avoided.

FIG. 3C shows the abutted arrangement resulting from FIG. 2B. In layoutdiagram 300C, MD patterns 340(2)-340(3) of layout diagram 300B have beenmerged as MD pattern 340(4). In layout diagram 300C, VD patterns342(2)-342(3) of layout diagram 300B have been merged as VD pattern342(4). In layout diagram 300C, M0 patterns 344(2)-342(3) of layoutdiagram 300B have been merged as M0 pattern 344(4).

FIGS. 4A-4B are corresponding cross-sectional views 400A-400B ofcorresponding parts of corresponding semiconductor devices, inaccordance with some embodiments.

More particularly, cross-sectional view 400A shows parts of asemiconductor device based on layout diagram 200B of FIG. 2B.Cross-sectional view 400B shows parts of a semiconductor device based onlayout diagram 300C of FIG. 3C. The cross-sectional views 400A-400B andthe semiconductor device including the same are corresponding examplesof cell region 104 and semiconductor device 100 of FIG. 1 .

FIGS. 4A-4B assume an orthogonal XYZ coordinate system in which theX-axis, Y-axis and Z-axis represent corresponding first, second andthird directions. In some embodiments, the first, second and thirddirections correspond to a different orthogonal coordinate system thanthe XYZ coordinate system.

Cross-sectional view 400A follows a similar numbering convention to thatof FIG. 2B. Whereas FIG. 2B uses 2-series numbers, FIG. 4A uses 4-seriesnumbers. For example, 408N(4) of FIG. 4A corresponds to gate pattern208N(4) of FIG. 2B. Cross-sectional view 400B follows a similarnumbering convention to that of FIG. 3C. Whereas FIG. 3C uses 3-seriesnumbers, FIG. 4B uses 4-series numbers. For example, fin 408N(23) ofFIG. 4B corresponds to fin pattern 308N(23) of FIG. 3C.

In FIG. 4A, cross-sectional view 400A includes sub-layers 441, 443 and445. In FIG. 4B, cross-sectional view 400A includes sub-layers 441, 443,445, 447 and 449.

In FIG. 4A, sub-layer 441 includes a substrate 406(2). Sub-layer 443includes fins 408N(1), 408N(3), 408N(4), 408P(2), 408P(3) and 408P(4),and an interlayer dielectric (ILD) 452. Sub-layer 445 includes gateelectrodes 417(1), 415(2) and 417(2), and an ILD 454.

In FIG. 4B, sub-layer 441 includes a substrate 406(3). Sub-layer 443includes fins 408N(25), 408N(24) and 408N(23), and ILD 452. Sub-layer445 includes MD contact 440(4), and ILD 454. Sub-layer 447 includes a VDstructure 442(4) and an ILD 456. Sub-layer 449 includes a M0 conductivesegment 444(4), and an ILD 458.

FIG. 5 is a flowchart of a method 500 of manufacturing a semiconductordevice, in accordance with some embodiments.

Examples of a semiconductor device which can be manufactured accordingto method 500 include semiconductor device 100 of FIG. 1 .

In FIG. 5 , method 500 includes blocks 502-504. At block 504, a layoutdiagram is generated which, among other things, has improved celldensity, and correspondingly improved layout diagram density. An exampleof a semiconductor device corresponding to a layout generated by method500 includes semiconductor device 100 of FIG. 1 . Block 502 is discussedin more detail below with respect to FIG. 6A. From block 502, flowproceeds to block 504.

At block 504, based on the layout diagram, at least one of (A) one ormore photolithographic exposures are made or (B) one or moresemiconductor masks are fabricated or (C) one or more components in alayer of a semiconductor device are fabricated. See discussion below ofFIG. 8 .

FIG. 6A is a flowchart of a method of generating a layout diagram, inaccordance with some embodiments.

More particularly, the method of FIG. 6A shows block 502 of FIG. 5 inmore detail, in accordance with one or more embodiments.

Examples of layout diagrams which can be generated according to themethod of FIG. 6A include the layout diagrams disclosed herein, or thelike. In some embodiments, the layout diagrams and correspondingversions thereof are stored on a non-transitory computer-readablemedium, e.g., stored as layout diagram(s) 708 in computer-readablemedium 704 of FIG. 7 (discussed below). The method of FIG. 6A isimplementable, for example, using EDA system 700 (FIG. 7 , discussedbelow), in accordance with some embodiments. Examples of a semiconductordevice which can be manufactured based on layout diagrams generatedaccording to the method of FIG. 6A include semiconductor device 100 FIG.1 , and semiconductor devices based on layout diagrams 200A-200H and300B-300C or the like.

In FIG. 6A, block 502 includes blocks 602-608. At block 602, standardcells are arranged into a layout diagram. Block 602 includes block 604.At block 604, stacking constraints with respect to top/bottom boundaryabutment of cells are taken into consideration. An example of thetop/bottom boundary constraints being taken into consideration is FIGS.3A-3C, or the like. Block 602 is discussed in more detail below withrespect to FIGS. 6B-6F. From block 602, flow proceeds to block 606.

At block 604, the layout diagram is subjected to automatic placement androuting (APR). From block 604, flow proceeds to block 606.

At block 606. the layout diagram is revised in light of timingconstraints with respect to top/bottom boundary abutment of cells. Insome embodiments, EDA system 700 includes a lookup table (or database)populated with delays associated with each cell type, e.g., cells210(x), 211(x), 212(x), 213(x), 230(x), 232(x), 234(x) and 236(x) ofFIGS. 2A-2H, or the like. In some embodiments, EDA system 700 includes alookup table (or database) populated with delays associated with eachparticular cell, e.g., cells 210(4), 211(4), 212(14), 213(4), 214(x),230(1), 232(1), 234(1), 236(1), or the like. Relative delaysimilarities/disparities are taken into consideration when assessing atop/bottom (or vice-versa) boundary abutment of cells.

FIG. 6B is a flowchart of a method of generating a layout diagram, inaccordance with some embodiments.

More particularly, the method of FIG. 6B shows block 602 of FIG. 6A inmore detail, in accordance with one or more embodiments.

In FIG. 6B, block 604 includes blocks 622-638. At block 620, first,second and third active area patterns are generated. In someembodiments, each of the first, second and third active area patterns isrepresented by one or more corresponding fin patterns. An example of thefirst active area pattern is fin pattern 208P(7) of FIG. 2C, or thelike. An example of the second active area pattern are fin patterns208N(5), 208N(6) and 208N(7) of FIG. 2C, or the like. An example of thethird active area pattern is fin pattern 208P(8) of FIG. 2C, or thelike. From block 622, flow proceeds to block 623.

At block 623, relative to the Y-axis, the second active area pattern islocated between the first and third active area patterns. Continuing theexample begun above in the context of block 622, an example of block 624is that fin patterns 208N(5), 208N(6) and 208N(7) of FIG. 2C are locatedbetween fin patterns 208P(7) and 208P(8) of FIG. 2C. From block 623,flow proceeds to block 624.

At block 624, first and second gate patterns are generated. Continuingthe example developed above in the context of block 623, examples of thefirst and second gate patterns include gate patterns 214(3) and 215(3)of FIG. 2C, or the like. From block 624, flow proceeds to block 626.

At block 626, the first gate pattern is located of the first active areapattern and at least a first part of the second active area pattern.Continuing the example developed above in the context of block 624, anexample of block 626 is that gate pattern 214(3) of FIG. 2C is locatedover fin pattern 208P(7) and one of fin patterns 208N(5), 208N(6) and208N(7), namely fin pattern 208N(5). From block 626, flow proceeds toblock 628.

At block 628, the second gate pattern is located of the third activearea pattern and at least a second part of the second active areapattern. Continuing the example developed above in the context of block626, an example of block 628 is that gate pattern 215(3) of FIG. 2C islocated over fin pattern 208P(8) and two of fin patterns 208N(5),208N(6) and 208N(7), namely fin patterns 208N(6) and 208N(7). From block628, flow proceeds to block 630.

At block 630, a first cell is defined to include the first gate pattern,the first active area pattern and at least the first part of the secondactive area pattern. Continuing the example developed above in thecontext of block 628, an example of block 630 is that cell 210(3) ofFIG. 2C includes gate pattern 214(3), fin pattern 208P(7) and finpattern 208N(5). From block 630, flow proceeds to block 632.

At block 632, a second cell is defined to include the second gatepattern, the third active area pattern and at least the second part ofthe second active area pattern. Continuing the example developed abovein the context of block 630, an example of block 632 is that cell 211(3)of FIG. 2C includes gate pattern 215(3), fin pattern 208P(8) and finpatterns 208N(6) and 208N(7). From block 632, flow proceeds to block634.

At block 634, the first and second cells are abutted which results in afirst border region substantially aligned with an approximate midline ofthe second active area pattern. Continuing the example developed abovein the context of block 632, an example of the first border region isborder region 228(2). More particularly, relative to the Y-axis, cell210(3) is abutted on cell 211(3). Relative to the Y-axis, as the middlefin pattern of three fin patterns, fin pattern 208N(6) substantiallyaligns with an approximate midline of the second active area pattern,where the latter is represented by fin patterns 208N(5), 208N(6) and208N(7). From block 634, flow proceeds to block 636.

At block 636, the second gate pattern is sized to overlap the firstborder region. Continuing the example developed above in the context ofblock 634, an example of block 636 is that, relative to the Y-axis, gatepattern 215(3) is sized to overlap border region 228(2), including finpattern 208N(6). From block 636, flow proceeds to block 638.

At block 638, the first gate pattern is sized to leave a first gap, thefirst gap being between the first gate pattern and the first borderregion. Continuing the example developed above in the context of block636, an example of block 638 is that, relative to the Y-axis, gatepattern 214(3) is sized to leave gap 226(4), where gap 226(4) is locatedbetween a bottom end of gate pattern 214(3) and border region 228(2).

FIG. 6C is a flowchart of a method of generating a layout diagram, inaccordance with some embodiments.

More particularly, the method of FIG. 6C shows additional blocksincluded in block 602 of FIG. 6B, in accordance with one or moreembodiments.

In FIG. 6C, block 602 further includes blocks 642-646. At block 642, afourth active area pattern is generated, where the first and fourthactive area patterns represent corresponding first and second parts of afifth active area pattern. Continuing the example developed above in thecontext of block 638 of FIG. 6B, an example of the fourth active areapattern are fin patterns 208P(5) and 208P(6) of FIG. 2C. Accordingly,fin pattern 208P(7) represents the first part of the fifth active areapattern, and fin patterns 208P(5) and 208P(6) represent the second partof the fifth active area pattern. From block 642, flow proceeds to block644.

At block 644, a third cell is defined to include the second part of thefifth active area pattern. Continuing the example developed above in thecontext of block 642, an example of block 644 is that cell 212(5)includes fin patterns 208P(5) and 208P(6). From block 644, flow proceedsto block 646.

At block 646, the third and first cells are abutted which results in (i)a second border region substantially aligned with an approximate midlineof the fifth active area pattern, (ii) a second gap, the second gapbeing between the first gate pattern and the second border region.Continuing the example developed above in the context of block 644, anexample of the second border region is border region 228(1). Moreparticularly, relative to the Y-axis, cell 212(5) is abutted on cell210(3). Relative to the Y-axis, as the middle fin pattern of three finpatterns, fin pattern 208P(6) substantially aligns with an approximatemidline of the fifth active area pattern, where the latter isrepresented by fin patterns 208P(5), 208P(6) and 208P(7). Also, gatepattern 214(3) is sized to leave gap 226(3), where gap 226(3) is locatedbetween a bottom end of gate pattern 217(3) and border region 228(1).

FIG. 6D is a flowchart of a method of generating a layout diagram, inaccordance with some embodiments.

More particularly, the method of FIG. 6D shows additional blocksincluded in block 602 of FIG. 6B, in accordance with one or moreembodiments.

In FIG. 6D, block 602 further includes blocks 652-658. At block 652, afourth active area pattern is generated, where the third and fourthactive area patterns represent corresponding first and second parts of afifth active area pattern. Continuing the example developed above in thecontext of block 638 of FIG. 6B, an example of the fourth active areapattern are fin patterns 208P(9) and 208P(10) of FIG. 2C. Accordingly,fin pattern 208P(8) represents the first part of the fifth active areapattern, and fin patterns 208P(9) and 208P(10) represent the second partof the fifth active area pattern. From block 652, flow proceeds to block654.

At block 654, a third cell is defined to include the second part of thefifth active area pattern. Continuing the example developed above in thecontext of block 652, an example of block 654 is that cell 212(6)includes fin patterns 208P(9) and 208P(10). From block 654, flowproceeds to block 656.

At block 656, the third and second cells are abutted which results in asecond border region substantially aligned with an approximate midlineof the fifth active area pattern. Continuing the example developed abovein the context of block 654, an example of the second border region isborder region 228(3). More particularly, relative to the Y-axis, cell211(3) is abutted on cell 212(6). Relative to the Y-axis, as the middlefin pattern of three fin patterns, fin pattern 208P(9) substantiallyaligns with an approximate midline of the fifth active area pattern,where the latter is represented by fin patterns 208P(8), 208P(9) and208P(10). From block 656, flow proceeds to block 658.

At block 658, the second gate pattern is sized to overlap the secondborder region. Continuing the example developed above in the context ofblock 656, an example of block 658 is that gate pattern 215(3) is sizedto overlap border region 228(3), including fin pattern 208P(9).

FIG. 6E is a flowchart of a method of generating a layout diagram, inaccordance with some embodiments.

More particularly, the method of FIG. 6E shows additional blocksincluded in block 602 of FIG. 6B, in accordance with one or moreembodiments.

In FIG. 6E, block 602 further includes blocks 662-668. At block 662, afourth active area pattern is generated, where the first and fourthactive area patterns represent corresponding first and second parts of afifth active area pattern. An example of the first active area patternfin patterns 208P(12) and 208P(13) of FIG. 2D. An example of the fourthactive area pattern is fin pattern 208P(11) of FIG. 2D. Accordingly, finpatterns 208P(12) and 208P(13) represent the first part of the fifthactive area pattern, and fin pattern 208P(11) represents the second partof the fifth active area pattern. From block 662, flow proceeds to block664.

At block 664, a third cell is defined to include the second part of thefifth active area pattern. Continuing the example developed above in thecontext of block 662, an example of the third cell is cell 212(7), andso an example of block 664 is that cell 212(7) includes fin pattern208P(11). From block 664, flow proceeds to block 666.

At block 666, the third and first cells are abutted which results in asecond border region substantially aligned with an approximate midlineof the fifth active area pattern. Continuing the example developed abovein the context of block 664 which also is in the context of FIG. 2D, anexample of the first cell is cell 213(1), an example of the first borderregion is border region 228(5), and an example of the second borderregion is border region 228(4). More particularly, relative to theY-axis, cell 212(7) is abutted on cell 213(1). Relative to the Y-axis,as the middle fin pattern of three fin patterns, fin pattern 208P(12)substantially aligns with an approximate midline of the fifth activearea pattern, where the latter is represented by fin patterns 208P(11),208P(12) and 208P(13). From block 666, flow proceeds to block 668.

At block 668, the first gate pattern is sized to overlap the secondborder region. Continuing the example developed above in the context ofblock 666, an example of the first gate pattern is gate pattern 216(1),and so an example of block 668 is that gate pattern 216(1) is sized tooverlap border region 228(4), including fin pattern 208P(12).

FIG. 6F is a flowchart of a method of generating a layout diagram, inaccordance with some embodiments.

More particularly, the method of FIG. 6F shows additional blocksincluded in block 602 of FIG. 6B, in accordance with one or moreembodiments.

In FIG. 6F, block 602 further includes blocks 672-676. At block 672, afourth active area pattern is generated, where the third and fourthactive area patterns represent corresponding first and second parts of afifth active area pattern. Continuing the example developed above in thecontext of block 638 of FIG. 6B, an example of the third active areapattern is fin pattern 208P(19), and an example of the fourth activearea pattern are fin patterns 208P(17) and 208P(18) of FIG. 2E.Accordingly, fin pattern 208P(19) represents the first part of the fifthactive area pattern, and fin patterns 208P(17) and 208P(18) representthe second part of the fifth active area pattern. From block 672, flowproceeds to block 674.

At block 674, a third cell is defined to include the second part of thefifth active area pattern. Continuing the example developed above in thecontext of block 672, an example of the third cell is cell 212(11), andso an example of block 674 is that cell 212(11) includes fin patterns208P(17) and 208P(18). From block 674, flow proceeds to block 676.

At block 676, the third and second cells are abutted which results in(i) a second border region substantially aligned with an approximatemidline of the fifth active area pattern, (ii) a second gap, the secondgap being between the second gate pattern and the second border region.Continuing the example developed above in the context of block 674,examples of the first and second gate patterns are correspondingly gatepatterns 216(3) and 216(2), an example of the first border region isborder region 228(8), and an example of the second border region isborder region 228(7). More particularly, relative to the Y-axis, cell212(11) is abutted on cell 213(2). Relative to the Y-axis, as the middlefin pattern of three fin patterns, fin pattern 208P(18) substantiallyaligns with an approximate midline of the fifth active area pattern,where the latter is represented by fin patterns 208P(17), 208P(18) and208P(19). Also, gate pattern 216(2) is sized to leave gap 226(9), wheregap 226(9) is located between a bottom end of gate pattern 217(4) andborder region 228(7).

FIG. 7 is a block diagram of an electronic design automation (EDA)system 700, in accordance with some embodiments.

In some embodiments, EDA system 700 includes an automatic placement androuting (APR) system. Methods described herein of generating PG layoutdiagrams, in accordance with one or more embodiments, are implementable,for example, using EDA system 700, in accordance with some embodiments.

In some embodiments, EDA system 700 is a general purpose computingdevice including a hardware processor 702 and a non-transitory,computer-readable storage medium 704. Storage medium 704, amongst otherthings, is encoded with, i.e., stores, computer program code 706, i.e.,a set of executable instructions. Execution of instructions 706 byhardware processor 702 represents (at least in part) an EDA tool whichimplements a portion or all of a method according to an embodiment,e.g., the methods described herein in accordance with one or moreembodiments (hereinafter, the noted processes and/or methods).

Processor 702 is electrically coupled to computer-readable storagemedium 704 via a bus 708. Processor 702 is also electrically coupled toan I/O interface 710 by bus 708. A network interface 712 is alsoelectrically connected to processor 702 via bus 708. Network interface712 is connected to a network 714, so that processor 702 andcomputer-readable storage medium 704 are capable of connecting toexternal elements via network 714. Processor 702 is configured toexecute computer program code 706 encoded in computer-readable storagemedium 704 in order to cause system 700 to be usable for performing aportion or all of the noted processes and/or methods. In one or moreembodiments, processor 702 is a central processing unit (CPU), amulti-processor, a distributed processing system, an applicationspecific integrated circuit (ASIC), and/or a suitable processing unit.

In one or more embodiments, computer-readable storage medium 704 is anelectronic, magnetic, optical, electromagnetic, infrared, and/orsemiconductor system (or apparatus or device). For example,computer-readable storage medium 704 includes a semiconductor orsolid-state memory, a magnetic tape, a removable computer diskette, arandom access memory (RAM), a read-only memory (ROM), a rigid magneticdisk, and/or an optical disk. In one or more embodiments using opticaldisks, computer-readable storage medium 704 includes a compact disk-readonly memory (CD-ROM), a compact disk-read/write (CD-R/W), and/or adigital video disc (DVD).

In one or more embodiments, storage medium 704 stores computer programcode (instructions) 706 configured to cause system 700 (where suchexecution represents (at least in part) the EDA tool) to be usable forperforming a portion or all of the noted processes and/or methods. Inone or more embodiments, storage medium 704 also stores informationwhich facilitates performing a portion or all of the noted processesand/or methods. In one or more embodiments, storage medium 704 storeslibrary 707 of standard cells including such standard cells as disclosedherein and one or more layout diagrams 708 such as are disclosed herein.

EDA system 700 includes I/O interface 710. I/O interface 710 is coupledto external circuitry. In one or more embodiments, I/O interface 710includes a keyboard, keypad, mouse, trackball, trackpad, touchscreen,and/or cursor direction keys for communicating information and commandsto processor 702.

EDA system 700 also includes network interface 712 coupled to processor702. Network interface 712 allows system 700 to communicate with network714, to which one or more other computer systems are connected. Networkinterface 712 includes wireless network interfaces such as BLUETOOTH,WIFI, WIMAX, GPRS, or WCDMA; or wired network interfaces such asETHERNET, USB, or IEEE-1364. In one or more embodiments, a portion orall of noted processes and/or methods, is implemented in two or moresystems 700.

System 700 is configured to receive information through I/O interface710. The information received through I/O interface 710 includes one ormore of instructions, data, design rules, libraries of standard cells,and/or other parameters for processing by processor 702. The informationis transferred to processor 702 via bus 708. EDA system 700 isconfigured to receive information related to a UI through I/O interface710. The information is stored in computer-readable medium 704 as userinterface (UI) 742.

In some embodiments, a portion or all of the noted processes and/ormethods is implemented as a standalone software application forexecution by a processor. In some embodiments, a portion or all of thenoted processes and/or methods is implemented as a software applicationthat is a part of an additional software application. In someembodiments, a portion or all of the noted processes and/or methods isimplemented as a plug-in to a software application. In some embodiments,at least one of the noted processes and/or methods is implemented as asoftware application that is a portion of an EDA tool. In someembodiments, a portion or all of the noted processes and/or methods areimplemented as a software application running on EDA system 700. In someembodiments, a layout diagram which includes standard cells is generatedusing a tool such as VIRTUOSO® available from CADENCE DESIGN SYSTEMS,Inc., or another suitable layout generating tool.

In some embodiments, the processes are realized as functions of aprogram stored in a non-transitory computer readable recording medium.Examples of a non-transitory computer readable recording medium include,but are not limited to, external/removable and/or internal/built-instorage or memory unit, e.g., one or more of an optical disk, such as aDVD, a magnetic disk, such as a hard disk, a semiconductor memory, suchas a ROM, a RAM, a memory card, and the like.

FIG. 8 is a block diagram of an integrated circuit (IC) manufacturingsystem 800, and an IC manufacturing flow associated therewith, inaccordance with some embodiments. In some embodiments, based on a layoutdiagram, at least one of (A) one or more semiconductor masks or (B) atleast one component in a layer of a semiconductor integrated circuit isfabricated using manufacturing system 800.

In FIG. 8 , IC manufacturing system 800 includes entities, such as adesign house 820, a mask house 830, and an IC manufacturer/fabricator(“fab”) 850, that interact with one another in the design, development,and manufacturing cycles and/or services related to manufacturing an ICdevice 860. The entities in system 800 are connected by a communicationsnetwork. In some embodiments, the communications network is a singlenetwork. In some embodiments, the communications network is a variety ofdifferent networks, such as an intranet and the Internet. Thecommunications network includes wired and/or wireless communicationchannels. Each entity interacts with one or more of the other entitiesand provides services to and/or receives services from one or more ofthe other entities. In some embodiments, two or more of design house820, mask house 830, and IC fab 850 is owned by a single larger company.In some embodiments, two or more of design house 820, mask house 830,and IC fab 850 coexist in a common facility and use common resources.

Design house (or design team) 820 generates an IC design layout diagram822. IC design layout diagram 822 includes various geometrical patternsdesigned for an IC device 860. The geometrical patterns correspond topatterns of metal, oxide, or semiconductor layers that make up thevarious components of IC device 860 to be fabricated. The various layerscombine to form various IC features. For example, a portion of IC designlayout diagram 822 includes various IC features, such as an activeregion, gate electrode, source and drain, metal lines or vias of aninterlayer interconnection, and openings for bonding pads, to be formedin a semiconductor substrate (such as a silicon wafer) and variousmaterial layers on the semiconductor substrate. Design house 820implements a proper design procedure to form IC design layout diagram822. The design procedure includes one or more of logic design, physicaldesign or place and route. IC design layout diagram 822 is presented inone or more data files having information of the geometrical patterns.For example, IC design layout diagram 822 can be expressed in a GDSIIfile format or DFII file format.

Mask house 830 includes data preparation 832 and mask fabrication 844.Mask house 830 uses IC design layout diagram 822 to manufacture one ormore masks 845 to be used for fabricating the various layers of ICdevice 860 according to IC design layout diagram 822. Mask house 830performs mask data preparation 832, where IC design layout diagram 822is translated into a representative data file (“RDF”). Mask datapreparation 832 provides the RDF to mask fabrication 844. Maskfabrication 844 includes a mask writer. A mask writer converts the RDFto an image on a substrate, such as a mask (reticle) 845 or asemiconductor wafer 853. The design layout diagram 822 is manipulated bymask data preparation 832 to comply with particular characteristics ofthe mask writer and/or requirements of IC fab 850. In FIG. 8 , mask datapreparation 832 and mask fabrication 844 are illustrated as separateelements. In some embodiments, mask data preparation 832 and maskfabrication 844 can be collectively referred to as mask datapreparation.

In some embodiments, mask data preparation 832 includes opticalproximity correction (OPC) which uses lithography enhancement techniquesto compensate for image errors, such as those that can arise fromdiffraction, interference, other process effects and the like. OPCadjusts IC design layout diagram 822. In some embodiments, mask datapreparation 832 includes further resolution enhancement techniques(RET), such as off-axis illumination, sub-resolution assist features,phase-shifting masks, other suitable techniques, and the like orcombinations thereof. In some embodiments, inverse lithographytechnology (ILT) is also used, which treats OPC as an inverse imagingproblem.

In some embodiments, mask data preparation 832 includes a mask rulechecker (MRC) that checks the IC design layout diagram 822 that hasundergone processes in OPC with a set of mask creation rules whichcontain certain geometric and/or connectivity restrictions to ensuresufficient margins, to account for variability in semiconductormanufacturing processes, and the like. In some embodiments, the MRCmodifies the IC design layout diagram 822 to compensate for limitationsduring mask fabrication 844, which may undo part of the modificationsperformed by OPC in order to meet mask creation rules.

In some embodiments, mask data preparation 832 includes lithographyprocess checking (LPC) that simulates processing that will beimplemented by IC fab 850 to fabricate IC device 860. LPC simulates thisprocessing based on IC design layout diagram 822 to create a simulatedmanufactured device, such as IC device 860. The processing parameters inLPC simulation can include parameters associated with various processesof the IC manufacturing cycle, parameters associated with tools used formanufacturing the IC, and/or other aspects of the manufacturing process.LPC takes into account various factors, such as aerial image contrast,depth of focus (“DOF”), mask error enhancement factor (“MEEF”), othersuitable factors, and the like or combinations thereof. In someembodiments, after a simulated manufactured device has been created byLPC, if the simulated device is not close enough in shape to satisfydesign rules, OPC and/or MRC are be repeated to further refine IC designlayout diagram 822.

It should be understood that the above description of mask datapreparation 832 has been simplified for the purposes of clarity. In someembodiments, data preparation 832 includes additional features such as alogic operation (LOP) to modify the IC design layout diagram 822according to manufacturing rules. Additionally, the processes applied toIC design layout diagram 822 during data preparation 832 may be executedin a variety of different orders.

After mask data preparation 832 and during mask fabrication 844, a mask845 or a group of masks 845 are fabricated based on the modified ICdesign layout diagram 822. In some embodiments, mask fabrication 844includes performing one or more lithographic exposures based on ICdesign layout diagram 822. In some embodiments, an electron-beam(e-beam) or a mechanism of multiple e-beams is used to form a pattern ona mask (photomask or reticle) 845 based on the modified IC design layoutdiagram 822. Mask 845 can be formed in various technologies. In someembodiments, mask 845 is formed using binary technology. In someembodiments, a mask pattern includes opaque regions and transparentregions. A radiation beam, such as an ultraviolet (UV) beam, used toexpose the image sensitive material layer (e.g., photoresist) which hasbeen coated on a wafer, is blocked by the opaque region and transmitsthrough the transparent regions. In one example, a binary mask versionof mask 845 includes a transparent substrate (e.g., fused quartz) and anopaque material (e.g., chromium) coated in the opaque regions of thebinary mask. In another example, mask 845 is formed using a phase shifttechnology. In a phase shift mask (PSM) version of mask 845, variousfeatures in the pattern formed on the phase shift mask are configured tohave proper phase difference to enhance the resolution and imagingquality. In various examples, the phase shift mask can be attenuated PSMor alternating PSM. The mask(s) generated by mask fabrication 844 isused in a variety of processes. For example, such a mask(s) is used inan ion implantation process to form various doped regions insemiconductor wafer 853, in an etching process to form various etchingregions in semiconductor wafer 853, and/or in other suitable processes.

IC fab 850 includes wafer fabrication 852. IC fab 850 is an ICfabrication business that includes one or more manufacturing facilitiesfor the fabrication of a variety of different IC products. In someembodiments, IC Fab 850 is a semiconductor foundry. For example, theremay be a manufacturing facility for the front end fabrication of aplurality of IC products (front-end-of-line (FEOL) fabrication), while asecond manufacturing facility may provide the back end fabrication forthe interconnection and packaging of the IC products (back-end-of-line(BEOL) fabrication), and a third manufacturing facility may provideother services for the foundry business.

IC fab 850 uses mask(s) 845 fabricated by mask house 830 to fabricate ICdevice 860. Thus, IC fab 850 at least indirectly uses IC design layoutdiagram 822 to fabricate IC device 860. In some embodiments,semiconductor wafer 853 is fabricated by IC fab 850 using mask(s) 845 toform IC device 860. In some embodiments, the IC fabrication includesperforming one or more lithographic exposures based at least indirectlyon IC design layout diagram 822. Semiconductor wafer 853 includes asilicon substrate or other proper substrate having material layersformed thereon. Semiconductor wafer 853 further includes one or more ofvarious doped regions, dielectric features, multilevel interconnects,and the like (formed at subsequent manufacturing steps).

Details regarding an integrated circuit (IC) manufacturing system (e.g.,system 800 of FIG. 8 ), and an IC manufacturing flow associatedtherewith are found, e.g., in U.S. Pat. No. 9,256,709, granted Feb. 9,2016, U.S. Pre-Grant Publication No. 20150278429, published Oct. 1,2015, U.S. Pre-Grant Publication No. 20140040838, published Feb. 6,2014, and U.S. Pat. No. 7,260,442, granted Aug. 21, 2007, the entiretiesof each of which are hereby incorporated by reference.

A system of one or more computers are configured to perform particularoperations or actions by virtue of having software, firmware, hardware,or a combination of them installed on the system that in operationcauses or cause the system to perform the actions. One or more computerprograms are configured to perform particular operations or actions byvirtue of including instructions that, when executed by data processingapparatus, cause the apparatus to perform the actions. In someembodiments, a method of fabricating a semiconductor device includesforming first, second and third active regions, the first and thirdactive regions having a first conductivity configuration, the secondactive region having a second conductivity configuration, and the first,second and third active regions having corresponding long axes extendingsubstantially in a first direction; relative to a second directionsubstantially perpendicular to the first direction, arranging the secondactive region between the first and third active regions; forming firstand second gate structures having corresponding long axes extendingsubstantially in the second direction; arranging the first gatestructure to be over the first active region and at least a first partof the second active region; arranging the second gate structure to beover the third active region and at least a second part of the secondactive region; relative to the second direction, configuring the secondgate structure to overlap a first border region, the first border regionrepresenting an overlap of first and second cell regions, the first cellregion including the first gate structure, the first active region andthe first part of the second active region, and the second cell regionincluding the second gate structure, the third active region and thesecond part of the second active region; aligning, relative to thesecond direction, the first border region with an approximate midline ofthe second active region; relative to the second direction, configuringthe first gate structure to not extend to the first border region. Themethod also includes forming a fourth active region having a first partof the first active region and having the first conductivityconfiguration. The method also includes forming a third cell region toinclude a second part of the fourth active region; and relative to thesecond direction, an approximate midline of the fourth active regionrepresenting a second border region between the first and the third cellregions and the first gate structure not extending to the second borderregion. Other embodiments of this aspect include corresponding computersystems, apparatus, and computer programs recorded on one or morecomputer storage devices, each configured to perform the actions of themethods.

Implementations may include one or more of the following features. Themethod where: the first, second and third active regions are configuredwith corresponding one or more fin structures having corresponding longaxes extending substantially in the first direction. The first andsecond conductivity configurations correspondingly are PMOS and NMOS; orthe first and second conductivity configurations correspondingly areNMOS and PMOS. The method includes: forming a fifth active region withthe first active region and the fourth active region representingcorresponding first and second parts of the fifth active region; andforming the third cell region to include the second part of the fifthactive region; and relative to the second direction, substantiallyabutting the third cell region and the first cell region resulting inthe second border region which is substantially aligned with anapproximate midline of the fifth active region; and a second gap whichis between the first gate structure and the second border region. Themethod includes: forming a fifth active region with the third activeregion and the fourth active region representing corresponding first andsecond parts of the fifth active region; and forming the third cellregion to include the second part of the fifth active region; relativeto the second direction, substantially abutting the third cell regionand the second cell region resulting in: the second border region whichis substantially aligned with an approximate midline of the fifth activeregion; and overlapping the second gate structure with the second borderregion. The method includes: forming a fifth active region with thefirst active region and the fourth active region representingcorresponding first and second parts of the fifth active region; andforming the third cell region to include the second part of the fifthactive region; relative to the second direction, substantially abuttingthe third cell region and the first cell region resulting in: the secondborder region which is substantially aligned with an approximate midlineof the fifth active region; and overlapping the first gate structurewith the second border region. The method includes: forming a fifthactive region with the fourth active region representing a first part ofthe fifth active region, the fourth and fifth active regions having thesecond conductivity configuration; forming the third cell region with asecond part of the fifth active region; and relative to the seconddirection an approximate midline of the fifth active region representingthe second border region which is between the first and third cellregions; and the second gate structure not extending to the secondborder region; forming a sixth active region which represents a firstpart of a seventh active region, the sixth and seventh active regionshaving the second conductivity configuration; and forming a fourth cellregion including a second part of the seventh active region and relativeto the second direction an approximate midline of the seventh activeregion representing a third border region which is between the first andfourth cell regions, and the first gate structure not extending to thesecond border region, and the first gate structure overlaps the thirdborder region. Implementations of the described techniques may includehardware, a method or process, or computer software on acomputer-accessible medium.

In some embodiments, a method of fabricating a semiconductor deviceincludes forming first, second and third active regions, the first andthird active regions having a first conductivity configuration, thesecond active region having a second conductivity configuration, and thefirst, second and third active regions having corresponding long axesextending substantially in a first direction; relative to a seconddirection substantially perpendicular to the first direction, arrangingthe second active region between the first and third active regions;forming first and second gate structures having corresponding long axesextending substantially in the second direction; arranging the firstgate structure to be over the first active region and at least a firstpart of the second active region; arranging the second gate structure tobe over the third active region and at least a second part of the secondactive region; relative to the second direction, configuring the secondgate structure to overlap a first border region, the first border regionrepresenting an overlap of first and second cell regions, the first cellregion including the first gate structure, the first active region andthe first part of the second active region, and the second cell regionincluding the second gate structure, the third active region and thesecond part of the second active region; aligning, relative to thesecond direction, the first border region with an approximate midline ofthe second active region; and relative to the second direction,configuring the first gate structure to not extend to the first borderregion. Other embodiments of this aspect include corresponding computersystems, apparatus, and computer programs recorded on one or morecomputer storage devices, each configured to perform the actions of themethods.

Implementations may include one or more of the following features. Themethod includes: forming a fourth active region having a first part ofthe first active region and having the first conductivity configuration;and forming a third cell region to include a second part of the fourthactive region; and relative to the second direction, an approximatemidline of the fourth active region representing a second border regionbetween the first and the third cell regions and the first gatestructure not extending to the second border region. The first andsecond conductivity configurations are correspondingly p-type andn-type; or the first and second conductivity configurations arecorrespondingly n-type and p-type. Each of the first active region, thesecond active region and the third active region is represented by oneor more corresponding fin patterns. The method includes: forming afourth active region extending substantially parallel to the firstdirection, and designated for the first conductivity configuration, thefirst active region and the fourth active region representingcorresponding first and second parts of a fifth active region; forming athird cell region to include the second part of the fifth active region;and relative to the second direction, substantially abutting the thirdcell region and the first cell region resulting in: a second borderregion which is substantially aligned with an approximate midline of thefifth active region; and a second gap which is between the first gatestructure and the second border region. The method includes: forming afourth active region extending substantially parallel to the firstdirection, and designated for the first conductivity configuration, thethird active region and the fourth active region representingcorresponding first and second parts of a fifth active region; forming athird cell region to include the second part of the fifth active region;relative to the second direction, substantially abutting the third cellregion and the second cell region resulting in: a second border regionwhich is substantially aligned with an approximate midline of the fifthactive region; and overlapping the second gate structure with the secondborder region. The method includes: forming a fourth active regionextending substantially parallel to the first direction, and designatedfor the first conductivity configuration, the first active region andthe fourth active region representing corresponding first part andsecond parts of a fifth active region; forming a third cell region toinclude the second part of the fifth active region; relative to thesecond direction, substantially abutting the third cell region and thefirst cell region resulting in: a second border region which issubstantially aligned with an approximate midline of the fifth activeregion; and overlapping the first gate structure with the second borderregion. The method includes: forming a fourth active region extendingsubstantially parallel to the first direction, and designated for thefirst conductivity configuration, the third active region and the fourthactive region representing corresponding first and second parts of afifth active region; and forming a third cell region to include thesecond part of the fifth active region; relative to the seconddirection, substantially abutting the third cell region and the secondcell region resulting in: a second border region which is substantiallyaligned with an approximate midline of the fifth active region; and asecond gap which is between the second gate structure and the secondborder region. The method includes: forming a fourth active regionextending substantially parallel to the first direction, and designatedfor the first conductivity configuration; forming a fifth active regionwith the third active region and the fourth active region representingcorresponding first and second parts of the fifth active region; andforming a third cell region to include the second part of the fifthactive region relative to the second direction, substantially abuttingthe third cell region and the second cell region resulting in: a secondborder region which is substantially aligned with an approximate midlineof the fifth active region; and a second gap which is between the secondgate structure and the second border region. Implementations of thedescribed techniques may include hardware, a method or process, orcomputer software on a computer-accessible medium.

In some embodiments, a method of fabricating a semiconductor deviceincludes forming first, second and third active regions, the first andthird active regions having a first conductivity configuration, thesecond active region having a second conductivity configuration, and thefirst, second and third active regions having corresponding long axesextending substantially in a first direction; relative to a seconddirection substantially perpendicular to the first direction, arrangingthe second active region between the first and third active regions;forming first and second gate structures having corresponding long axesextending substantially in the second direction; arranging the firstgate structure to be over the first active region and at least a firstpart of the second active region; arranging the second gate structure tobe over the third active region and at least a second part of the secondactive region; relative to the second direction, configuring the secondgate structure to overlap a first border region, the first border regionrepresenting an overlap of first and second cell regions, the first cellregion including the first gate structure, the first active region andthe first part of the second active region, and the second cell regionincluding the second gate structure, the third active region and thesecond part of the second active region; aligning, relative to thesecond direction, the first border region with an approximate midline ofthe second active region; relative to the second direction, configuringthe first gate structure to not extend to the first border region. Themethod also includes forming a fourth active region having the thirdactive region as a first part and having the first conductivityconfiguration. The method also includes forming a third cell region toinclude a second part of the fourth active region; and relative to thesecond direction, an approximate midline of the fourth active regionrepresenting a second border region between the first and the third cellregions overlapped by the second gate structure. Other embodiments ofthis aspect include corresponding computer systems, apparatus, andcomputer programs recorded on one or more computer storage devices, eachconfigured to perform the actions of the methods.

Implementations may include one or more of the following features. Themethod includes at least one of: forming one or more semiconductor masksat a masking facility based on a layout diagram; or forming at least onecomponent in a layer of a semiconductor at a fabricating facility basedon a layout diagram. The method includes: forming the third cell regionto include a second part of a fifth active region; and relative to thesecond direction, substantially abutting the third cell region and thesecond cell region resulting in: a second gap which is between thesecond gate structure and the second border region. Implementations ofthe described techniques may include hardware, a method or process, orcomputer software on a computer-accessible medium.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of fabricating a semiconductor device,the method comprising: forming first, second and third active regions,the first and third active regions having a first conductivityconfiguration, the second active region having a second conductivityconfiguration, and the first, second and third active regions havingcorresponding long axes extending substantially in a first direction;relative to a second direction substantially perpendicular to the firstdirection, arranging the second active region between the first andthird active regions; forming first and second gate structures havingcorresponding long axes extending substantially in the second direction;arranging the first gate structure to be over the first active regionand at least a first part of the second active region; arranging thesecond gate structure to be over the third active region and at least asecond part of the second active region; relative to the seconddirection, configuring the second gate structure to overlap a firstborder region, the first border region representing an overlap of firstand second cell regions, the first cell region including the first gatestructure, the first active region and the first part of the secondactive region, and the second cell region including the second gatestructure, the third active region and the second part of the secondactive region; aligning, relative to the second direction, the firstborder region with an approximate midline of the second active region;and relative to the second direction, configuring the first gatestructure to not extend to the first border region.
 2. The method ofclaim 1, further comprising: forming a fourth active region extendingsubstantially parallel to the first direction, and designated for thefirst conductivity configuration; forming a fifth active region with thethird active region and the fourth active region representingcorresponding first and second parts of the fifth active region; andforming a third cell region to include the second part of the fifthactive region relative to the second direction, substantially abuttingthe third cell region and the second cell region resulting in: a secondborder region which is substantially aligned with an approximate midlineof the fifth active region; and a second gap which is between the secondgate structure and the second border region.
 3. The method of claim 1,further comprising: forming a fourth active region extendingsubstantially parallel to the first direction, and designated for thefirst conductivity configuration, the third active region and the fourthactive region representing corresponding first and second parts of afifth active region; and forming a third cell region to include thesecond part of the fifth active region; relative to the seconddirection, substantially abutting the third cell region and the secondcell region resulting in: a second border region which is substantiallyaligned with an approximate midline of the fifth active region; and asecond gap which is between the second gate structure and the secondborder region.
 4. The method of claim 1, further comprising: forming afourth active region extending substantially parallel to the firstdirection, and designated for the first conductivity configuration, thefirst active region and the fourth active region representingcorresponding first and second parts of a fifth active region; forming athird cell region to include the second part of the fifth active region;and relative to the second direction, substantially abutting the thirdcell region and the first cell region resulting in: a second borderregion which is substantially aligned with an approximate midline of thefifth active region; and a second gap which is between the first gatestructure and the second border region.
 5. The method of claim 1,further comprising: forming a fourth active region extendingsubstantially parallel to the first direction, and designated for thefirst conductivity configuration, the third active region and the fourthactive region representing corresponding first and second parts of afifth active region; forming a third cell region to include the secondpart of the fifth active region; relative to the second direction,substantially abutting the third cell region and the second cell regionresulting in: a second border region which is substantially aligned withan approximate midline of the fifth active region; and overlapping thesecond gate structure with the second border region.
 6. The method ofclaim 1, further comprising: forming a fourth active region extendingsubstantially parallel to the first direction, and designated for thefirst conductivity configuration, the first active region and the fourthactive region representing corresponding first part and second parts ofa fifth active region; forming a third cell region to include the secondpart of the fifth active region; relative to the second direction,substantially abutting the third cell region and the first cell regionresulting in: a second border region which is substantially aligned withan approximate midline of the fifth active region; and overlapping thefirst gate structure with the second border region.
 7. The method ofclaim 1, further comprising: forming a fourth active region having afirst part of the first active region and having the first conductivityconfiguration; and forming a third cell region to include a second partof the fourth active region; and relative to the second direction, anapproximate midline of the fourth active region representing a secondborder region between the first and the third cell regions and the firstgate structure not extending to the second border region.
 8. The methodof claim 1, wherein: the first and second conductivity configurationsare correspondingly P-type and N-type; or the first and secondconductivity configurations are correspondingly N-type and P-type. 9.The method of claim 1, wherein: each of the first active region, thesecond active region and the third active region is represented by oneor more corresponding fin patterns.
 10. A method of fabricating asemiconductor device, the method comprising: forming first, second andthird active regions, the first and third active regions having a firstconductivity configuration, the second active region having a secondconductivity configuration, and the first, second and third activeregions having corresponding long axes extending substantially in afirst direction; relative to a second direction substantiallyperpendicular to the first direction, arranging the second active regionbetween the first and third active regions; forming first and secondgate structures having corresponding long axes extending substantiallyin the second direction; arranging the first gate structure to be overthe first active region and at least a first part of the second activeregion; arranging the second gate structure to be over the third activeregion and at least a second part of the second active region; relativeto the second direction, configuring the second gate structure tooverlap a first border region, the first border region representing anoverlap of first and second cell regions, the first cell regionincluding the first gate structure, the first active region and thefirst part of the second active region, and the second cell regionincluding the second gate structure, the third active region and thesecond part of the second active region; aligning, relative to thesecond direction, the first border region with an approximate midline ofthe second active region; relative to the second direction, configuringthe first gate structure to not extend to the first border region;forming a fourth active region having the third active region as a firstpart and having the first conductivity configuration; and forming athird cell region to include a second part of the fourth active region;and relative to the second direction, an approximate midline of thefourth active region representing a second border region between thefirst and the third cell regions overlapped by the second gatestructure.
 11. The method of claim 10, further comprising: forming thethird cell region to include a second part of a fifth active region; andrelative to the second direction, substantially abutting the third cellregion and the second cell region resulting in: a second gap which isbetween the second gate structure and the second border region.
 12. Themethod of claim 10, further comprising: forming the third cell region toinclude a second part of a fifth active region; and relative to thesecond direction, substantially abutting the third cell region and thefirst cell region resulting in: overlapping the first gate structurewith the second border region.
 13. The method of claim 10, furthercomprising at least one of: forming one or more semiconductor masks at amasking facility based on a layout diagram; or forming at least onecomponent in a layer of a semiconductor at a fabricating facility basedon a layout diagram.
 14. A method of fabricating a semiconductor device,the method comprising: forming first, second and third active regions,the first and third active regions having a first conductivityconfiguration, the second active region having a second conductivityconfiguration, and the first, second and third active regions havingcorresponding long axes extending substantially in a first direction;relative to a second direction substantially perpendicular to the firstdirection, arranging the second active region between the first andthird active regions; forming first and second gate structures havingcorresponding long axes extending substantially in the second direction;arranging the first gate structure to be over the first active regionand at least a first part of the second active region; arranging thesecond gate structure to be over the third active region and at least asecond part of the second active region; relative to the seconddirection, configuring the second gate structure to overlap a firstborder region, the first border region representing an overlap of firstand second cell regions, the first cell region including the first gatestructure, the first active region and the first part of the secondactive region, and the second cell region including the second gatestructure, the third active region and the second part of the secondactive region; aligning, relative to the second direction, the firstborder region with an approximate midline of the second active region;relative to the second direction, configuring the first gate structureto not extend to the first border region; forming a fourth active regionhaving a first part of the first active region and having the firstconductivity configuration; and forming a third cell region to include asecond part of the fourth active region; and relative to the seconddirection, an approximate midline of the fourth active regionrepresenting a second border region between the first and the third cellregions and the first gate structure not extending to the second borderregion.
 15. The method of claim 14, further comprising: forming a fifthactive region with the fourth active region representing a first part ofthe fifth active region, the fourth and fifth active regions having thesecond conductivity configuration; forming the third cell region with asecond part of the fifth active region; and relative to the seconddirection an approximate midline of the fifth active region representingthe second border region which is between the first and third cellregions; and the second gate structure not extending to the secondborder region; forming a sixth active region which represents a firstpart of a seventh active region, the sixth and seventh active regionshaving the second conductivity configuration; and forming a fourth cellregion including a second part of the seventh active region and relativeto the second direction an approximate midline of the seventh activeregion representing a third border region which is between the first andfourth cell regions, and the first gate structure not extending to thesecond border region, and the first gate structure overlaps the thirdborder region.
 16. The method of claim 14, further comprising: forming afifth active region with the first active region and the fourth activeregion representing corresponding first and second parts of the fifthactive region; and forming the third cell region to include the secondpart of the fifth active region; relative to the second direction,substantially abutting the third cell region and the first cell regionresulting in: the second border region which is substantially alignedwith an approximate midline of the fifth active region; and overlappingthe first gate structure with the second border region.
 17. The methodof claim 14, further comprising: forming a fifth active region with thethird active region and the fourth active region representingcorresponding first and second parts of the fifth active region; andforming the third cell region to include the second part of the fifthactive region; relative to the second direction, substantially abuttingthe third cell region and the second cell region resulting in: thesecond border region which is substantially aligned with an approximatemidline of the fifth active region; and overlapping the second gatestructure with the second border region.
 18. The method of claim 14,further comprising: forming a fifth active region with the first activeregion and the fourth active region representing corresponding first andsecond parts of the fifth active region; and forming the third cellregion to include the second part of the fifth active region; andrelative to the second direction, substantially abutting the third cellregion and the first cell region resulting in the second border regionwhich is substantially aligned with an approximate midline of the fifthactive region; and a second gap which is between the first gatestructure and the second border region.
 19. The method of claim 14,wherein: the first and second conductivity configurationscorrespondingly are PMOS and NMOS; or the first and second conductivityconfigurations correspondingly are NMOS and PMOS.
 20. The method ofclaim 14, wherein: the first, second and third active regions areconfigured with corresponding one or more fin structures havingcorresponding long axes extending substantially in the first direction.